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BY8108 Folha de dados(PDF) 4 Page - NXP Semiconductors |
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BY8108 Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 1996 May 24 4 Philips Semiconductors Product specification Very fast high-voltage soft-recovery controlled avalanche rectifiers BY8100 series ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 100 mA; Tj =Tj max; see Figs 9 to 15 BY8104 −− 26 V BY8106 −− 36 V BY8108 −− 44.5 V BY8110 −− 54.5 V BY8112 −− 75 V BY8114 −− 82.5 V BY8116 −− 94 V IR reverse current VR =VRWmax; Tj = 120 °C −− 3 µA Qr recovery charge when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 −− 0.4 nC tf fall time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 40 −− ns trr reverse recovery time when switched from IF = 2 mA to IR = 4 mA; measured at IR = 1 mA; see Fig.17 −− 60 ns Cd diode capacitance VR =0V; f=1MHz BY8104 − 0.90 − pF BY8106 − 0.65 − pF BY8108 − 0.55 − pF BY8110 − 0.45 − pF BY8112 − 0.35 − pF BY8114 − 0.30 − pF BY8116 − 0.25 − pF |
Nº de peça semelhante - BY8108 |
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Descrição semelhante - BY8108 |
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