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BYG60D Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BYG60D Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 1996 Jun 05 3 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYG60 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’. ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off BYG60D to J − 10 mJ BYG60K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.4 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Fig.5 −− 0.98 V IF = 1 A; see Fig.5 −− 1.20 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYG60D 300 −− V BYG60G 500 −− V BYG60J 700 −− V BYG60K 900 −− V BYG60M 1100 −− V IR reverse current VR =VRRMmax; see Fig.6 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.6 −− 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 BYG60D to J −− 250 ns BYG60K and M −− 300 ns Cd diode capacitance VR = 0 V; f = 1 MHz BYG60D to J − 30 − pF BYG60K and M − 25 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 25 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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Descrição semelhante - BYG60D |
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