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BYD73G Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BYD73G Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 11 page 1996 Sep 18 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Ttp =55 °C; see Figs 6 and 7 BYD73A to D − 14 A BYD73E to G − 15 A IFRM repetitive peak forward current Tamb =60 °C; see Figs 8 and 9 BYD73A to D − 8.5 A BYD73E to G − 9.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 25 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 12 and 13 BYD73A to D −− 0.75 V BYD73E to G −− 0.83 V VF forward voltage IF =1A; see Figs 12 and 13 BYD73A to D −− 0.98 V BYD73E to G −− 1.05 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD73A 55 −− V BYD73B 110 −− V BYD73C 165 −− V BYD73D 220 −− V BYD73E 275 −− V BYD73F 330 −− V BYD73G 440 −− V IR reverse current VR =VRRMmax; see Fig.14 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.14 −− 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.18 BYD73A to D −− 25 ns BYD73E to G −− 50 ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
Nº de peça semelhante - BYD73G |
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Descrição semelhante - BYD73G |
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