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AD829JR Folha de dados(PDF) 4 Page - Analog Devices

Nome de Peças AD829JR
Descrição Electrónicos  High Speed, Low Noise Video Op Amp
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

AD829JR Folha de dados(HTML) 4 Page - Analog Devices

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REV. G
–4–
AD829
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD829 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 W
CERDIP (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
LCC (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±V
Differential Input Voltage
3
. . . . . . . . . . . . . . . . . . . . . . .
±6 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range (Q, E) . . . . . . . . –65
°C to +150°C
Storage Temperature Range (N, R) . . . . . . . . –65
°C to +125°C
Operating Temperature Range
AD829J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
°C to 70°C
AD829A . . . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +125°C
AD829S . . . . . . . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300
°C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Maximum internal power dissipation is specified so that T
J does not exceed
150
°C at an ambient temperature of 25°C.
Thermal characteristics:
8-lead PDIP package:
θ
JA = 100
°C/W (derate at 8.7 mW/°C)
8-lead CERDIP package:
θ
JA = 110
°C/W (derate at 8.7 mW/°C)
20-lead LCC package:
θ
JA = 77
°C/W
8-lead SOIC package:
θ
JA = 125
°C/W (derate at 6 mW/°C).
3 If the differential voltage exceeds 6 V, external series protection resistors should
be added to limit the input current.
METALLIZATION PHOTO
Contact factory for latest dimensions.
Dimensions shown in inches and (mm).
2.5
2.0
1.5
1.0
0.5
0
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 95 105 115 125
AMBIENT TEMPERATURE ( C)
LCC
CERDIP
SOIC
PDIP
Figure 1. Maximum Power Dissipation vs. Temperature
SUBSTRATE CONNECTED TO +VS


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