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BF240 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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BF240 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2003 Fairchild Semiconductor Corporation Rev. A, September 2003 Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T A=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 50 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 40 V V(BR)CBO Collector-Base BreakdownVoltage IC = 100µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 4.0 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 100 nA On Characteristics hFE DC Current Gain IC = 1mA, VCE = 10V 65 225 VCE(sat) Collector-Emitter Saturation Voltage IC = 1mA, IB = 0.1mA 0.65 V VBE(sat) Base-Emitter Saturation Voltage IC = 1mA, IB = 0.1mA 0.74 V Small Signal Characteristics fT Current gain Bandwidth Product IC = 7.0mA, VCE = 10V, f = 100MHz 1100 MHz Cre Common-Emitter Ruerse Transfer Capacitance VCB = 10V, IE = 0, f = 1.0MHz 0.34 pF Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W BF240 NPN RF Transistor TO-92 1. Collector 2. Emitter 3. Base 1 |
Nº de peça semelhante - BF240 |
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Descrição semelhante - BF240 |
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