4N35, 4N36, 4N37

OPTOCOUPLERS

SOES021C – NOVEMBER 1981 – REVISED APRIL 1998

1

POST OFFICE BOX 655303

COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS

Optically Coupled to a Silicon npn

Phototransistor

1.5-kV, 2.5-kV, or 3.55-kV Rating

Terminal Isolation, SCR and Triac Triggers,

Mechanical Relays and Pulse Transformers

UL/CUL, File No. E65085

absolute maximum ratings at 25

Input-to-output peak voltage (8-ms half sine wave): 4N35

3.55 kV

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4N36

2.5 kV

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4N37

1.5 kV

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35

2.5 kV

. . . . . . . . . . . . . . . . . . . . . . . . .

4N36

1.75 kV

. . . . . . . . . . . . . . . . . . . . . . . .

4N37

1.05 kV

. . . . . . . . . . . . . . . . . . . . . . . .

Collector-base voltage

70 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector-emitter voltage (see Note 1)

30 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter-base voltage

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input-diode reverse voltage

6 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input-diode forward current: Continuous

60 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (1

µs, 300 pps)

3 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phototransistor continuous collector current

100 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation at (or below) 25

°C free-air temperature:

Infrared-emitting diode (see Note 2)

100 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phototransistor (see Note 3)

300 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous power dissipation at (or below) 25

°C lead temperature:

Infrared-emitting diode (see Note 4)

100 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phototransistor (see Note 5)

500 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55

°C to 100°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may

affect device reliability.

NOTES:

1. This value applies when the base-emitter diode is open-circulated.

2. Derate linearly to 100

°C free-air temperature at the rate of 1.33 mW/°C.

3. Derate linearly to 100

°C free-air temperature at the rate of 4 mW/°C.

4. Derate linearly to 100

°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead

0.8 mm (1/32 inch) from the case.

5. Derate linearly to 100

°C lead temperature at the rate of 6.7 mW/°C.

Copyright

© 1998, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

1

2

3

6

5

4

ANODE

CATHODE

NC

BASE

COLLECTOR

EMITTER

DCJ† OR 6-TERMINAL DUAL-IN-LINE PACKAGE

(TOP VIEW)

†4N35 only

NC – No internal connection

schematic

ANODE

CATHODE

NC

COLLECTOR

BASE

EMITTER