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IRF640 Folha de dados(PDF) 1 Page - NXP Semiconductors |
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IRF640 Folha de dados(HTML) 1 Page - NXP Semiconductors |
1 / 9 page Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance V DSS = 200 V • Fast switching • Low thermal resistance I D = 16 A R DS(ON) ≤ 180 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D 2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D 2PAK) PIN DESCRIPTION 1 gate 2 drain 1 3 source tab drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = 25 ˚C to 175˚C - 200 V V DGR Drain-gate voltage T j = 25 ˚C to 175˚C; RGS = 20 kΩ - 200 V V GS Gate-source voltage - ± 20 V I D Continuous drain current T mb = 25 ˚C; V GS = 10 V - 16 A T mb = 100 ˚C; VGS = 10 V - 11 A I DM Pulsed drain current T mb = 25 ˚C - 64 A P D Total power dissipation T mb = 25 ˚C - 136 W T j, Tstg Operating junction and - 55 175 ˚C storage temperature d g s 13 tab 2 12 3 tab 1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.100 |
Nº de peça semelhante - IRF640 |
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Descrição semelhante - IRF640 |
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