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IRF640 Folha de dados(PDF) 1 Page - NXP Semiconductors

Nome de Peças IRF640
Descrição Electrónicos  N-channel TrenchMOS transistor
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRF640 Folha de dados(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel TrenchMOS
™ transistor
IRF640, IRF640S
FEATURES
SYMBOL
QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance
V
DSS = 200 V
• Fast switching
• Low thermal resistance
I
D = 16 A
R
DS(ON) ≤ 180 mΩ
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF640S is supplied in the SOT404 (D
2PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 ˚C to 175˚C
-
200
V
V
DGR
Drain-gate voltage
T
j = 25 ˚C to 175˚C; RGS = 20 kΩ
-
200
V
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 ˚C; V
GS = 10 V
-
16
A
T
mb = 100 ˚C; VGS = 10 V
-
11
A
I
DM
Pulsed drain current
T
mb = 25 ˚C
-
64
A
P
D
Total power dissipation
T
mb = 25 ˚C
-
136
W
T
j, Tstg
Operating junction and
- 55
175
˚C
storage temperature
d
g
s
13
tab
2
12 3
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100


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