Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

IRF640S Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças IRF640S
Descrição Electrónicos  N-channel TrenchMOS transistor
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRF640S Folha de dados(HTML) 2 Page - NXP Semiconductors

  IRF640S Datasheet HTML 1Page - NXP Semiconductors IRF640S Datasheet HTML 2Page - NXP Semiconductors IRF640S Datasheet HTML 3Page - NXP Semiconductors IRF640S Datasheet HTML 4Page - NXP Semiconductors IRF640S Datasheet HTML 5Page - NXP Semiconductors IRF640S Datasheet HTML 6Page - NXP Semiconductors IRF640S Datasheet HTML 7Page - NXP Semiconductors IRF640S Datasheet HTML 8Page - NXP Semiconductors IRF640S Datasheet HTML 9Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
Philips Semiconductors
Product specification
N-channel TrenchMOS
™ transistor
IRF640, IRF640S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 6.2 A;
-
580
mJ
energy
t
p = 720 µs; Tj prior to avalanche = 25˚C;
V
DD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig;14
I
AS
Peak non-repetitive
-
16
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
1.1
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint
ELECTRICAL CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
200
-
-
V
voltage
T
j = -55˚C
178
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 175˚C
1
-
-
V
T
j = -55˚C
-
6
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 8 A
-
130
180
m
resistance
T
j = 175˚C
-
-
522
m
I
GSS
Gate source leakage current V
GS = ± 20 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 200 V; VGS = 0 V;
-
0.05
10
µA
current
V
DS = 160 V; VGS = 0 V; Tj = 175˚C
-
-
250
µA
Q
g(tot)
Total gate charge
I
D = 18 A; VDD = 160 V; VGS = 10 V
-
-
63
nC
Q
gs
Gate-source charge
-
-
12
nC
Q
gd
Gate-drain (Miller) charge
-
-
35
nC
t
d on
Turn-on delay time
V
DD = 100 V; RD = 5.6 Ω;
-
12
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5.6 Ω
-45
-
ns
t
d off
Turn-off delay time
Resistive load
-
54
-
ns
t
f
Turn-off fall time
-
38
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1850
-
pF
C
oss
Output capacitance
-
170
-
pF
C
rss
Feedback capacitance
-
91
-
pF
August 1999
2
Rev 1.100


Nº de peça semelhante - IRF640S

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
IRF640S STMICROELECTRONICS-IRF640S Datasheet
84Kb / 8P
   N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
logo
International Rectifier
IRF640S IRF-IRF640S Datasheet
228Kb / 10P
   Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
logo
Vishay Siliconix
IRF640S VISHAY-IRF640S Datasheet
2Mb / 8P
   Power MOSFET
Rev. A, 07-Jul-08
IRF640S VISHAY-IRF640S Datasheet
237Kb / 10P
   Power MOSFET
01-Jan-2022
logo
Inchange Semiconductor ...
IRF640S ISC-IRF640S Datasheet
286Kb / 2P
   isc N-Channel MOSFET Transistor
2023-8-23
More results

Descrição semelhante - IRF640S

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
NXP Semiconductors
PSMN057-200P PHILIPS-PSMN057-200P Datasheet
92Kb / 8P
   N-channel TrenchMOS transistor
June 2000 Rev 1.000
PHP23NQ15T PHILIPS-PHP23NQ15T Datasheet
99Kb / 9P
   N-channel TrenchMOS transistor
August 1999 Rev 1.000
PHP34NQ10T PHILIPS-PHP34NQ10T Datasheet
115Kb / 12P
   N-channel TrenchMOS transistor
August 1999 Rev 1.000
PHX23NQ10T PHILIPS-PHX23NQ10T Datasheet
61Kb / 8P
   N-channel TrenchMOS transistor
September 1999 Rev 1.000
PSMN040-200W PHILIPS-PSMN040-200W Datasheet
86Kb / 7P
   N-channel TrenchMOS transistor
August 1999 Rev 1.000
logo
New Jersey Semi-Conduct...
IRF630_13 NJSEMI-IRF630_13_06 Datasheet
923Kb / 3P
   N-channel TrenchMOS transistor
logo
NXP Semiconductors
PSMN009-100W PHILIPS-PSMN009-100W Datasheet
121Kb / 4P
   N-channel TrenchMOS transistor
February 1999 Rev 1.000
PSMN015-100B PHILIPS-PSMN015-100B Datasheet
146Kb / 9P
   N-channel TrenchMOS transistor
August 1999 Rev 1.100
PSMN130-200D PHILIPS-PSMN130-200D Datasheet
143Kb / 12P
   N-channel TrenchMOS transistor
August 1999
PHP18NQ20T PHILIPS-PHP18NQ20T Datasheet
96Kb / 9P
   N-channel TrenchMOS transistor
August 1999 Rev 1.000
PHP27NQ10T PHILIPS-PHP27NQ10T Datasheet
115Kb / 12P
   N-channel TrenchMOS transistor
August 1999 Rev 1.000
More results


Html Pages

1 2 3 4 5 6 7 8 9


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com