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LCE2009S Folha de dados(PDF) 8 Page - NXP Semiconductors |
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LCE2009S Folha de dados(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 1997 Mar 03 8 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S APPLICATION INFORMATION Microwave performance for LBE2003S up to Tmb =25 °C in a common emitter class-A test circuit; note 1. Notes 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1. MODE OF OPERATION f (GHz) VCE (V) (2) IC (mA) (2) PL1 (mW) (3) Gpo (dB) (4) Zi ( Ω) ZL ( Ω) Class-A (CW) 2 18 30 ≥200 (23) typ. 250 (24) ≥10 typ. 11 6.2 + j30 17.5 + j7 Fig.7 Prematching test circuit board for 2 GHz. Dimensions in mm. Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric ( εr = 2.54); thickness: 0.8 mm. handbook, full pagewidth C MCD635 input output C 10.5 2 3 2.5 2 12.5 621 3 2 2 66.5 12.5 7 10.5 14.5 2 2 0.5 1.2 1 6 3.5 5 5 LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
Nº de peça semelhante - LCE2009S |
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Descrição semelhante - LCE2009S |
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