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AM29DL400BB-80SD Folha de dados(PDF) 10 Page - Advanced Micro Devices

Nome de Peças AM29DL400BB-80SD
Descrição Electrónicos  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
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Am29DL400B
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated
through the internal command register. The com-
mand register itself does not occupy any addressable
memory location. The register is a latch used to
store the commands, along with the address and
data information needed to execute the command.
The contents of the register serve as inputs to the in-
ternal state machine. The state machine outputs
dictate the function of the device. Table 1 lists the
device bus operations, the inputs and control levels
they require, and the resulting output. The following
subsections describe each of these operations in fur-
ther detail.
Table 1. Am29DL400B Device Bus Operations
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A17:A0 in word mode (BYTE# = VIH), A17:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Pro-
tection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word
configuration, DQ0-15 are active and controlled by
CE# and OE# .
If the BYTE# pin is set at logic ‘0’, the device is in
byte configuration, and only data I/O pins DQ0–DQ7
are active and controlled by CE# and OE#. The data
I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin
is used as an input for the LSB (A-1) address
function.
Requirements for Reading Array Data
To read array data from the outputs, the system
must drive the CE# and OE# pins to VIL. CE# is the
power control and selects the device. OE# is the out-
put control and gates array data to the output pins.
WE# should remain at VIH. The BYTE# pin deter-
mines whether the device outputs array data in
words or bytes.
The internal state machine is set for reading array
data upon device power-up, or after a hardware re-
set. This ensures that no spurious alteration of the
memory content occurs during the power transition.
No command is necessary in this mode to obtain
array data. Standard microprocessor read cycles that
assert valid addresses on the device address inputs
produce valid data on the device data outputs. Each
bank remains enabled for read access until the com-
mand register contents are altered.
See “Reading Array Data” for more information.
Refer to the AC Read-Only Operations table for tim-
ing specifications and to Figure 13 for the timing
diagram. ICC1 in the DC Characteristics table repre-
sents the active current specification for reading
array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
Operation
CE# OE#
WE
#
RESET#
Addresses
(Note 1)
DQ0–
DQ7
DQ8–DQ15
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
AIN
DOUT
DOUT
DQ8–DQ14 = High-Z,
DQ15 = A-1
Write
L
H
L
H
AIN
DIN
DIN
Standby
VCC ±
0.3 V
XX
VCC ±
0.3 V
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
XX
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
XX
Temporary Sector Unprotect
X
X
X
VID
AIN
DIN
DIN
High-Z


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