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AM29F200BT-70SD Folha de dados(PDF) 4 Page - Advanced Micro Devices

Nome de Peças AM29F200BT-70SD
Descrição Electrónicos  2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices

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Am29F200B
21526D4 November 1, 2006
D A TA
SH EE T
GENERAL DESCRIPTION
The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash
memory organized as 262,144 bytes or 131,072 words.
The 8 bits of data appear on DQ0–DQ7; the 16 bits on
DQ0–DQ15. The Am29F200B is offered in 44-pin SO
and 48-pin TSOP packages. The device is also avail-
able in Known Good Die (KGD) form. For more
information, refer to publication number 21257. This
device is designed to be programmed in-system with
the standard system 5.0 volt VCC supply. A 12.0 volt
VPP is not required for program or erase operations.
The device can also be reprogrammed in standard
EPROM programmers.
This device is manufactured using AMD’s 0.32 µm
process technology, and offers all the features and ben-
efits of the Am29F200A, which was manufactured
using 0.5 µm process technology.
The standard device offers access times of 45, 50, 55,
70, 90, and 120 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus
contention the device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
The device requires only a single 5.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and
DQ6/DQ2 (toggle) status bits. After a program or
erase cycle has been completed, the device is ready to
read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory.
This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby
mode. Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.


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