DZT953-13 datasheet(2/4 Pages) DIODES

Nome de Peças	DZT953-13

Descrição Electrónicos	PNP SURFACE MOUNT TRANSISTOR

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Electrical Characteristics @T

A = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

-140

⎯

V

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-100

⎯

V

IC = -10mA*, IB = 0

B

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

⎯

V

IE = -100μA, IC = 0

Collector Cutoff Current

ICBO

⎯

-50

-1

nA

μA

VCB = -100V, IE = 0

VCB = -100V, IE = 0, TA = 100°C

Emitter Cutoff Current

IEBO

⎯

-10

nA

VEB = - 6V, IC = 0

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-20

-90

-160

-300

-50

-115

-220

-420

mV

IC = -100mA, IB = -10mA*

I

B

C = -1A, IBB = -100mA*

IC = -2A, IB = -200mA*

I

B

C = -4A, IBB = -400mA*

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1010

-1170

mV

IC = -4A, IB = -400mA*

B

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

-925

-1160

mV

ICE = -4A, VCE = -1V*

DC Current Gain

hFE

100

50

30

⎯

15

⎯

300

⎯

IC = -10mA, VCE = -1V*

IC = -1A, VCE = -1V*

IC = -3A, VCE = -1V*

IC = -4A, VCE = -1V*

IC = -10A, VCE = -1V*

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

⎯

125

⎯

MHz

IC = -100mA, VCE = -10V,

f = 50MHz

Output Capacitance

Cobo

⎯

65

⎯

pF

VCB = -10V, f = 1MHz

SWITCHING CHARACTERISTICS

IC = -2A, IB1 = -200mA

Switching Times

ton

toff

⎯

110

460

⎯

ns

IB2 = 200mA, VCC = -10V

*Measured under pulsed conditions. Pulse width = 300

μs

. Duty cycle ≤2%

Typical Characteristics @T

amb = 25°C unless otherwise specified

Fig. 1 Power Dissipation VS. Ambient Temperature (Note 3)

Fig. 2 Collector Current vs. Collector Emitter Voltage

Notes:

3.

Device mounted on FR-4 PCB, pad layout as shown on page 4.

DS30941 Rev. 5 - 2

2 of 4

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DZT953

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