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AM29LV200BT-60RDFI Folha de dados(PDF) 1 Page - Advanced Micro Devices

Nome de Peças AM29LV200BT-60RDFI
Descrição Electrónicos  2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV200BT-60RDFI Folha de dados(HTML) 1 Page - Advanced Micro Devices

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SUPPLEMENT
Publication# 26014
Rev: A Amendment/+2
Issue Date: November 18, 2003
Am29LV200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■ Manufactured on 0.32 µm process technology
■ High performance
60R, 70, 90, 120 ns access time
■ Low power consumption (typical values at
5MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Top or Bottom boot block configuration
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee
per sector
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
■ 20-year data retention at 125
°C
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
■ 500 µm or 280 µm die thickness shipping options


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