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Nome de Peças AM29F160DT70EF
Descrição Electrónicos  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# Am29F160D_00 Revision: D
Amendment: 6 Issue Date: November 2, 2006
Am29F160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 5.0 Volt single power supply operation
— Minimizes system-level power requirements
■ High performance
— Access times as fast as 70 ns
■ Manufactured on 0.23 µm process technology
■ CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
■ Ultra low power consumption (typical values at
5 MHz)
— 15 mA typical active read current
— 35 mA typical erase/program current
— 300 nA typical standby mode current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— Hardware method of locking a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top boot or bottom boot configurations
available
■ Minimum 1,000,000 write cycle guarantee
per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package options
— 48-pin TSOP
■ Compatible with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Unlock Bypass Program command
— Reduces overall programming time when
issuing multiple program command sequences
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
■ WP# input pin
—At VIL, protects the 16 Kbyte boot sector from
erasure regardless of sector protect/unprotect
status
—At VIH, allows removal of boot sector protection
■ Program and Erase Performance
— Sector erase time: 1 s typical for each 64 Kbyte
sector
— Byte program time: 7 µs typical


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