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FCB11N60 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FCB11N60 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCB11N60 Rev. A1 SuperFETTM July 2005 FCB11N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C •Typ. RDS(on) = 0.32Ω • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency. Absolute Maximum Ratings Thermal Characteristics * When mounted on the minimum pad size recommended (PCB Mount) S D G G S D Symbol Parameter FCB11N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 11 7 A A IDM Drain Current - Pulsed (Note 1) 33 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 125 1.0 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FCB11N60 Unit RθJC Thermal Resistance, Junction-to-Case 1.0 °C/W RθJA* Thermal Resistance, Junction-to-Ambient* 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W |
Nº de peça semelhante - FCB11N60_05 |
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Descrição semelhante - FCB11N60_05 |
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