Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

FDC640P Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDC640P
Descrição Electrónicos  P-Channel 2.5V PowerTrench Specified MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC640P Folha de dados(HTML) 2 Page - Fairchild Semiconductor

  FDC640P_01 Datasheet HTML 1Page - Fairchild Semiconductor FDC640P_01 Datasheet HTML 2Page - Fairchild Semiconductor FDC640P_01 Datasheet HTML 3Page - Fairchild Semiconductor FDC640P_01 Datasheet HTML 4Page - Fairchild Semiconductor FDC640P_01 Datasheet HTML 5Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
FDC640P Rev E(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250
µA, Referenced to 25°C
–14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.6
–1.0
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –4.5 A
VGS = –2.5 V,
ID = –3.6 A
VGS = –4.5 V, ID = –4.5A,TJ=125
°C
0.039
0.062
0.053
0.053
0.080
0.077
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –4.5 A
16
S
Dynamic Characteristics
Ciss
Input Capacitance
890
pF
Coss
Output Capacitance
244
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
123
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
12
22
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
24
38
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
13
23
ns
Qg
Total Gate Charge
9
13
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –4.5 A,
VGS = –4.5 V
3nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.3 A (Note 2)
–0.7
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a.
78°C/W when mounted on a 1in
2 pad of 2oz copper on FR-4 board.
b.
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%


Nº de peça semelhante - FDC640P_01

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Fairchild Semiconductor
FDC640P FAIRCHILD-FDC640P Datasheet
261Kb / 8P
   P-Channel 2.5V Specified PowerTrenchTM MOSFET
More results

Descrição semelhante - FDC640P_01

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Fairchild Semiconductor
FDC634P FAIRCHILD-FDC634P_01 Datasheet
138Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
SI4463DY FAIRCHILD-SI4463DY Datasheet
49Kb / 3P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDC638P FAIRCHILD-FDC638P_01 Datasheet
156Kb / 5P
   P-Channel 2.5V PowerTrench Specified MOSFET
FDN302P FAIRCHILD-FDN302P Datasheet
103Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDN342P FAIRCHILD-FDN342P Datasheet
307Kb / 8P
   P-Channel 2.5V Specified PowerTrench??MOSFET
FDR840P FAIRCHILD-FDR840P Datasheet
78Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDC602P FAIRCHILD-FDC602P_01 Datasheet
66Kb / 5P
   P-Channel 2.5V PowerTrench Specified MOSFET
FDW264P FAIRCHILD-FDW264P Datasheet
153Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
SI6463DQ FAIRCHILD-SI6463DQ Datasheet
97Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
FDS6576 FAIRCHILD-FDS6576_06 Datasheet
451Kb / 5P
   P-Channel 2.5V Specified PowerTrench MOSFET
logo
Guangdong Kexin Industr...
KDS6375 KEXIN-KDS6375 Datasheet
66Kb / 2P
   P-Channel 2.5V Specified PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com