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FDD6632 Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FDD6632 Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2004 Fairchild Semiconductor Corporation FDD6632 Rev. B1 Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 4.5V) Switching Characteristics (VGS = 10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 25V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1 - 3 V rDS(ON) Drain to Source On Resistance ID = 9A, VGS = 10V - 0.058 0.070 Ω ID = 6A, VGS = 4.5V - 0.090 0.110 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 255 - pF COSS Output Capacitance - 73 - pF CRSS Reverse Transfer Capacitance - 23 - pF Qg(TOT) Total Gate Charge at 5V VGS = 0V to 5V VDD = 15V ID = 9A Ig = 1.0mA -2.6 4.0 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 0.3 0.5 nC Qgs Gate to Source Gate Charge - 0.8 - nC Qgd Gate to Drain “Miller” Charge - 0.8 - nC tON Turn-On Time VDD = 15V, ID = 6A VGS = 4.5V, RGS = 47Ω - - 77 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 41 - ns td(OFF) Turn-Off Delay Time - 10 - ns tf Fall Time - 23 - ns tOFF Turn-Off Time - - 50 ns tON Turn-On Time VDD = 15V, ID = 6A VGS = 10V, RGS = 47Ω -- 9 ns td(ON) Turn-On Delay Time - 4 - ns tr Rise Time - 2 - ns td(OFF) Turn-Off Delay Time - 33 - ns tf Fall Time - 20 - ns tOFF Turn-Off Time - - 80 ns tAV Avalanche Time ID = 2.3A, L = 3.0mH 153 - - µs VSD Source to Drain Diode Voltage ISD = 9A - - 1.25 V ISD = 5A - - 1.0 V trr Reverse Recovery Time ISD = 9A, dISD/dt = 100A/µs- - 18 ns QRR Reverse Recovered Charge ISD = 9A, dISD/dt = 100A/µs- - 8 nC |
Nº de peça semelhante - FDD6632_04 |
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Descrição semelhante - FDD6632_04 |
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