FDS3670 Rev C(W)

Typical Characteristics

0

2

4

6

8

10

0

10

20

30405060

V

50V

80V

0

500

1000

1500

2000

2500

3000

3500

4000

4500

0

2040

6080

100

C

ISS

f = 1MHz

V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

1000

DC

10s

1s

100ms

10ms

1ms

100

µs

V

SINGLE PULSE

T

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TI ME (s e c)

1

S i n g l e P u l s e

D = 0.5

0.1

0.05

0.02

0.01

0.2

D u t y C y c l e, D = t /t

1

2

R

(t) = r(t) * R

R

= 125°C/ W

θJA

θJA

θJA

T - T

= P * R

(t)

θJA

A

J

P(pk)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.