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FDS6612A Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDS6612A
Descrição Electrónicos  Single N-Channel, Logic-Level, PowerTrench MOSFET
Download  7 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6612A Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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FDS6612A Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
26
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
VDS = 24 V, VGS = 0 V, TJ=55
°C
10
µA
IGSS
Gate–Body Leakage
VGS =
±20 V, V
DS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
1
1.9
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–4.4
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 8.4 A
VGS = 4.5 V,
ID = 7.2 A
VGS= 10 V, ID = 8.4 A, TJ=125
°C
19
24
25
22
30
37
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 15 V,
ID = 8.4 A
30
S
Dynamic Characteristics
Ciss
Input Capacitance
560
pF
Coss
Output Capacitance
140
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
55
pF
RG
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
2.5
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
7
14
ns
tr
Turn–On Rise Time
5
10
ns
td(off)
Turn–Off Delay Time
22
35
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
3
6
ns
Qg
Total Gate Charge
5.4
7.6
nC
Qgs
Gate–Source Charge
1.7
nC
Qgd
Gate–Drain Charge
VDS = 15 V,
ID = 8.4 A,
VGS = 5 V
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.1 A (Note 2)
0.77
1.2
V
trr
Diode Reverse Recovery Time
19
nS
Qrr
Diode Reverse Recovery Charge
IF = 8.4 A, diF/dt = 100 A/µs
9
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
50°C/W when mounted
on a 1in
2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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