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FDZ202P Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDZ202P Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  January 2004 2004 Fairchild Semiconductor Corporation FDZ202P Rev. D2 (W) FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low RDS(ON). Applications • Battery management • Load switch • Battery protection Features • –5.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V RDS(ON) = 75 mΩ @ VGS = –2.5 V • Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability Pin 1 G S S S D D D S S D D D Bottom Pin 1 Top S D G Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –5.5 A – Pulsed –20 PD Power Dissipation (Steady State) (Note 1a) 2 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 64 °C/W RθJB Thermal Resistance, Junction-to-Ball (Note 1) 8 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.7 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 202P FDZ202P 7’’ 8mm 3000 units |
Nº de peça semelhante - FDZ202P_04 |
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Descrição semelhante - FDZ202P_04 |
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