NX6306 datasheet(1/5 Pages) CEL

Nome de Peças	NX6306

Descrição Electrónicos	1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

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Fabricante Electrônico	CEL [California Eastern Labs]

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NEC's 1310 nm InGaAsP MQW DFB

LASER DIODE IN CAN PACKAGE

FOR 155 Mb/s and 622 Mb/s APPLICATIONS

NX6306 SERIES

FEATURES

• OPTICAL OUTPUT POWER:

Po = 5.0 mW

• LOW THRESHOLD CURRENT:

lth = 10 mA @ TC = 25°C

• HIGH SPEED:

tr, tf = 0.5 ns MAX.

• 40% REDUCTION OF MOUNTING AREA:

5-pin SOP × 2

• SIDE MODE SUPPRESSION RATIO:

SWSR = 45 dB @ TYP.

• InGaAs MONITOR PIN-PD

• CAN PACKAGE:

φ

5.6 mm

• BASED ON TELCORDIA RELIABILITY

DESCRIPTION

NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well

(MQW) structured Distributed Feed-Back (DFB) laser diode

with InGaAs monitor PIN-PD.

This device is ideal for Gigabit Ethernet and Synchronous

Digital Hierarchy (SDH) system STM-1 (I-1, S-1.1, L-1.1),

STM-4 (I-4, S-4.1, L-4.1), ITU-T recommendations.

California Eastern Laboratories

APPLICATIONS

• 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1)

• 622 Mb/s: STM-4 (I-4, S-4.1, L-4.1)

• 1.25 Gb/s: Gigabit Ethernet

The information in this document is subject to change without notice. Before using this document, please conﬁrm that

this is the latest version.

PRELIMINARY DATASHEET

NX6306G Series

NX6306S Series

Nº de peça semelhante - NX6306

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	NX6306	272Kb / 11P	LASER DIODE 2004
California Eastern Labs	NX63067H	401Kb / 5P	1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
California Eastern Labs	NX63067K	401Kb / 5P	1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
Renesas Technology Corp	NX6306GH	272Kb / 11P	LASER DIODE 2004
Renesas Technology Corp	NX6306GK	272Kb / 11P	LASER DIODE 2004

More results

Descrição semelhante - NX6306

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
California Eastern Labs	NX6301	96Kb / 4P	1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
	NX5312	347Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
	NX7301BA-CC	105Kb / 4P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
	NX5304	167Kb / 5P	NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
	NX5310	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
	NX8303BG-CC	98Kb / 4P	NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
	NX6506	353Kb / 5P	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
	NX8504BE-CC	111Kb / 5P	1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
	NX7312UA	187Kb / 4P	NECs 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS
	NX6511GH	967Kb / 6P	LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS

More results

NX6306 Folha de dados(PDF) 1 Page - California Eastern Labs

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