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74ABT544N Folha de dados(PDF) 8 Page - NXP Semiconductors

Nome de Peças 74ABT544N
Descrição Electrónicos  Octal latched transceiver with dual enable; inverting; 3-state
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74ABT544N Folha de dados(HTML) 8 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 20 April 2005
8 of 19
Philips Semiconductors
74ABT544
Octal latched transceiver with dual enable; inverting; 3-state
[1]
For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
[2]
This parameter is valid for any VCC between 0 V and 2.1 V, with a transition time of up to 10 ms. From VCC = 2.1 V to VCC =5V ± 10 %
a transition time of up to 100
µs is permitted.
[3]
Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[4]
This is the increase in supply current for each input at 3.4 V.
11. Dynamic characteristics
ILI
input leakage current
VCC = 5.5 V; VI = GND or 5.5 V
control pins
-
-
±1.0
µA
data pins
-
-
±100
µA
IOFF
power-down leakage current
VCC = 0 V; VI or VO ≤ 4.5 V
-
-
±100
µA
IPU, IPD
power-up or power-down 3-state
output current
VCC = 2.1 V; VO = 0.5 V; VI = GND or VCC;
VOExx = don’t care
[2] --
±50
µA
IOZ
3-state output current
VCC = 5.5 V; VI = VIL or VIH
output HIGH-state at VO = 2.7 V
-
-
50
µA
output LOW-state at VO = 0.5 V
-
-
−50
µA
ICEX
output HIGH-state leakage
current
VCC = 5.5 V; VO = 5.5 V; VI = GND or VCC
--50
µA
IO
output current
VCC = 5.5 V; VO = 2.5 V
[3]
−50
-
−180
mA
ICC
quiescent supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
-
-
250
µA
outputs LOW-state
-
-
30
mA
outputs 3-state
-
-
250
µA
∆ICC
additional supply current per
input pin
VCC = 5.5 V; one input at 3.4 V and other
inputs at VCC or GND; VCC = 5.5 V
[4] -
-
1.5
mA
Table 7:
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Table 8:
Dynamic characteristics
GND = 0 V; for test circuit see Figure 10.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C; VCC = 5.0 V
tPLH
propagation delay
An to Bn, Bn to An
see Figure 5
1.7
3.0
3.8
ns
LEBA to An, LEAB to Bn
see Figure 5 and 6
2.1
3.5
4.2
ns
tPHL
propagation delay
An to Bn, Bn to An
see Figure 5
2.4
3.6
4.5
ns
LEBA to An, LEAB to Bn
see Figure 5 and 6
3.0
4.4
5.3
ns
tPZH
output enable time to HIGH-level
OEBA to An, OEAB to Bn
see Figure 7
1.8
3.0
3.9
ns
EBA to An, EAB to Bn
see Figure 7
1.9
3.4
4.1
ns
tPZL
output enable time to LOW-level
OEBA to An, OEAB to Bn
see Figure 8
2.9
4.2
5.2
ns
EBA to An, EAB to Bn
see Figure 8
3.1
4.6
5.5
ns


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