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STFV4N150 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STFV4N150 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 13 page STFV4N150 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1500 V VDGR Drain-gate voltage (RGS = 20 kΩ) 1500 V VGS Gate- source voltage ± 30 V ID (1) 1. Limited only by maximum temperature allowed Drain current (continuous) at TC = 25°C 4 A ID Drain current (continuous) at TC = 100°C 2.5 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25°C 40 W Derating factor 0.32 W/°C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; TC=25°C) 2500 V Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 3.12 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Table 3. Avalanche data Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 4A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 350 mJ |
Nº de peça semelhante - STFV4N150_07 |
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Descrição semelhante - STFV4N150_07 |
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