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STFV4N150 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STFV4N150
Descrição Electrónicos  N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STFV4N150
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
1500
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
1500
V
VGS
Gate- source voltage
± 30
V
ID
(1)
1.
Limited only by maximum temperature allowed
Drain current (continuous) at TC = 25°C
4
A
ID
Drain current (continuous) at TC = 100°C
2.5
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
12
A
PTOT
Total dissipation at TC = 25°C
40
W
Derating factor
0.32
W/°C
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1s; TC=25°C)
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
3.12
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
4A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
350
mJ


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