PHP69N03T datasheet(3/8 Pages) PHILIPS

Nome de Peças	PHP69N03T

Descrição Electrónicos	TrenchMOS transistor Standard level FET

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHP69N03T

Standard level FET

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

69

A

current

I

DRM

Pulsed reverse drain current

-

240

A

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.95

1.2

V

I

F = 69 A; VGS = 0 V

-

1.0

-

V

t

rr

Reverse recovery time

I

F = 69 A; -dIF/dt = 100 A/µs;

-

60

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 25 V

-

0.1

-

µC

AVALANCHE LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 36 A; VDD ≤ 15 V;

-

125

mJ

unclamped inductive turn-off

V

GS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C

energy

September 1997

3

Rev 1.100

Nº de peça semelhante - PHP69N03T

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PHP69N03T Folha de dados(PDF) 3 Page - NXP Semiconductors

PHP69N03T Folha de dados(HTML) 3 Page - NXP Semiconductors

Nº de peça semelhante - PHP69N03T

Descrição semelhante - PHP69N03T

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