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MC33977DWR2 Folha de dados(PDF) 6 Page - Freescale Semiconductor, Inc |
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MC33977DWR2 Folha de dados(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 37 page Analog Integrated Circuit Device Data 6 Freescale Semiconductor 33977 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS POWER OUTPUT (SIN-, SIN+, COS-, COS+) (Continued) Microstep Full Step Output (Measured from Coil Low Side to Ground) SIN± (COS±) IOUT = 30 mA VLS 0.0 0.1 0.3 V Output Flyback Clamp (11) VFB – VST6 + 0.5 VST6 + 1.0 V Output Current Limit (Output - VST6) ILIM 40 100 170 mA Overtemperature Shutdown (12) TSD 155 – 180 °C Overtemperature Hysteresis (12) THYST 8.0 – 16 °C CONTROL I/O (SI, SCLK, CS, RST, SO) Input Logic High Voltage (12) VIH 2.0 – – V Input Logic Low Voltage (12) VIL – – 0.8 V Input Logic Voltage Hysteresis (12) VINHYST – 100 – mV Input Logic Pull-Down Current (SI, SCLK) IDWN 3.0 – 20 µA Input Logic Pull-Up Current (CS, RST) IUP 5.0 – 20 µA SO High State Output Voltage (IOH = 1.0 mA) VSOH 0.8 VDD – – V SO Low State Output Voltage (IOL = 1.6 mA) VSOL – 0.2 0.4 V SO Tri-State Leakage Current (CS = 3.5 V) ISOLK -5.0 0.0 5.0 µA Input Capacitance (13) CIN – 4.0 12 pF SO Tri-State Capacitance (13) CSO – – 20 pF ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT) ADC Gain (12), (14) GADC 100 188 270 Counts/V/ ms Notes 11. Outputs remain active; however, the reduction in drive voltage may result in a loss of position control. 12. This parameter is guaranteed by design; however, it is not production tested. 13. Capacitance not measured. This parameter is guaranteed by design; however, it is not production tested. 14. Reference RTZ Accumulator (Typical) on page 30 Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 4.75 V < VDD < 5.25 V, and -40°C < TA< 125°C, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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Descrição semelhante - MC33977DWR2 |
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