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PZT3906 Folha de dados(PDF) 4 Page - NXP Semiconductors |
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PZT3906 Folha de dados(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1999 Apr 14 4 Philips Semiconductors Product specification PNP switching transistor PZT3906 Fig.2 DC current gain; typical values. VCE = −1V. handbook, full pagewidth 0 80 160 hFE 40 120 MGD835 −10−2 −10−1 −1 IC (mA) −10 −102 −103 Fig.3 Test circuit for switching times. handbook, full pagewidth RC R2 R1 DUT MGD624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB Vi VCC Vi = −5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3V. Oscilloscope input impedance Zi =50 Ω. |
Nº de peça semelhante - PZT3906 |
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Descrição semelhante - PZT3906 |
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