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FDD8424H Folha de dados(PDF) 3 Page - Fairchild Semiconductor

Nome de Peças FDD8424H
Descrição Electrónicos  Dual N & P-Channel PowerTrench짰 MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD8424H Folha de dados(HTML) 3 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Notes:
1. RθJA is determined with the device mounted on a 1in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 0.3mH, IAS = 14A, VDD = 40V, VGS = 10V; P-ch: L = 0.3mH, IAS = -15A, VDD = -40V, VGS = -10V.
a. 40°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Q1
Q2
a. 40°C/W when mounted on
a 1 in2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
Scale 1 : 1 on letter size paper
Electrical Characteristics T
J = 25°C unless otherwise noted
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 9.0A
(Note 2)
VGS = 0V, IS = -6.5A
(Note 2)
Q1
Q2
0.87
0.88
1.2
-1.2
V
trr
Reverse Recovery Time
Q1
IF = 9.0A, di/dt = 100A/s
Q2
IF = -6.5A, di/dt = 100A/s
Q1
Q2
25
29
38
44
ns
Qrr
Reverse Recovery Charge
Q1
Q2
19
29
29
44
nC


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