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BF1208D Folha de dados(PDF) 9 Page - NXP Semiconductors |
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BF1208D Folha de dados(HTML) 9 Page - NXP Semiconductors |
9 / 22 page BF1208D_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 16 May 2007 9 of 22 NXP Semiconductors BF1208D Dual N-channel dual gate MOSFET VDS(A) =VDS(B) =5V; VG1-S(B) = 0 V; f = 50 MHz; Tamb =25 °C; see Figure 33. VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) =19mA Fig 12. Amplifier A: drain current as a function of gain reduction; typical values Fig 13. Amplifier A: input admittance as a function of frequency; typical values VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) =19mA VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) =19mA Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values gain reduction (dB) 050 40 20 30 10 001aac197 12 20 28 ID (mA) 4 001aag357 f (MHz) 10 103 102 10−1 1 10 102 bis, gis (mS) 10−2 bis gis 001aag358 10 1 102 Yfs (mS) 10−1 −10 −1 −102 ϕfs (deg) −10−1 f (MHz) 10 103 102 Yfs ϕfs 001aag359 102 10 103 Yrs ( µS) 1 −102 −10 −103 ϕrs (deg) −1 f (MHz) 10 103 102 Yrs ϕrs |
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