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SI4800 Folha de dados(PDF) 2 Page - NXP Semiconductors |
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SI4800 Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 13 page Philips Semiconductors Si4800 N-channel enhancement mode field-effect transistor Product data Rev. 01 — 13 July 2001 2 of 13 9397 750 08412 © Philips Electronics N.V. 2001. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 °C − 30 V ID drain current Tamb =25 °C; pulsed; tp ≤ 10 s − 9A Ptot total power dissipation Tamb =25 °C; pulsed; tp ≤ 10 s − 2.5 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 9 A; Tj =25 °C 15.5 18.5 m Ω VGS = 4.5 V; ID = 7 A; Tj =25 °C 27.5 33 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 °C − 30 V VGS gate-source voltage (DC) −±20 V ID drain current Tamb =25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3 − 9A Tamb =70 °C; pulsed; tp ≤ 10 s; Figure 2 − 7A IDM peak drain current Tamb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 40 A Ptot total power dissipation Tamb =25 °C; pulsed; tp ≤ 10 s; Figure 1 − 2.5 W Tamb =70 °C; pulsed; tp ≤ 10 s; Figure 1 − 1.6 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current Tamb =25 °C; pulsed; tp ≤ 10 s − 2.3 A |
Nº de peça semelhante - SI4800 |
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Descrição semelhante - SI4800 |
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