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1N5418US Folha de dados(PDF) 1 Page - Microsemi Corporation |
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1N5418US Folha de dados(HTML) 1 Page - Microsemi Corporation |
1 / 3 page VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS SCOTTSD A L E DIVISION 1N5415US thru 1N5420US DESCRIPTION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting by deleting the “US” suffix (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Package “E” or D-5B IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Surface mount package series equivalent to the JEDEC registered 1N5415 to 1N5420 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 50 to 600 Volts. • JAN, JANTX, JANTXV, and JANS available per MIL- PRF-19500/411 • Axial-leaded equivalents also available (see separate data sheet for 1N5415 thru 1N5420) • Fast recovery 3 Amp rectifiers 50 to 600 V • Military and other high-reliability applications • General rectifier applications including bridges, half- bridges, catch diodes, etc. • High forward surge current capability • Extremely robust construction • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction Temperature: -65 oC to +175oC • Storage Temperature: -65 oC to +175oC • Thermal Resistance: 10 oC/W junction to endcap • Thermal Impedance: 1.5 oC/W @ 10 ms heating time • Average Rectified Forward Current (IO): 3 Amps @ TA = 55ºC and 2 Amps @ TA = 100ºC (see Note 1) • Forward Surge Current (8.3 ms half sine): 80 Amps • Solder temperatures: 260 oC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINALS: End caps are solid Silver with Tin/Lead (Sn/Pb) finish • MARKING: Cathode band only • POLARITY: Cathode indicated by band • TAPE & REEL option: Standard per EIA-481-B • WEIGHT: 539 mg • See package dimensions and recommended pad layout on last page ELECTRICAL CHARACTERISTICS FORWARD VOLTAGE VF @ 9 A MAXIMUM REVERSE CURRENT IR @ VRWM AVERAGE RECTIFIED CURRENT IO (NOTE 1) TYPE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 50µA VOLTS MIN. VOLTS MAX. VOLTS 25 oC µA 100 oC µA MAXIMUM REVERSE RECOVERY TIME trr (NOTE 2) ns 55 oC AMPS 100 oC AMPS 1N5415US 1N5416US 1N5417US 1N5418US 1N5419US 1N5420US 50V 100V 200V 400V 500V 600V 55V 110V 220V 440V 550V 660V 0.6 0.6 0.6 0.6 0.6 0.6 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 20 20 20 20 20 20 150 150 150 150 250 400 3.0 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 2.0 2.0 2.0 NOTE 1: From 3.0 Amps at TA = 55 oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC. NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 11-22-2004 REV A |
Nº de peça semelhante - 1N5418US |
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Descrição semelhante - 1N5418US |
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