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TDA8510 Folha de dados(PDF) 9 Page - NXP Semiconductors |
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TDA8510 Folha de dados(HTML) 9 Page - NXP Semiconductors |
9 / 16 page 1999 Dec 14 9 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE power amplifiers TDA8510J AC CHARACTERISTICS VP = 15 V; f = 1 kHz; Tamb =25 °C; measure in Fig.7; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTL channel Po output power note 1 THD = 0.5% 16 20 − W THD = 10% 22 26 − W THD total harmonic distortion Po =1W − 0.06 − % B power bandwidth THD = 0.5%; − 20 to − Hz Po = −1 dB; with respect to 16 W 15000 fro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off at −1dB 20 −− kHz Gv closed loop voltage gain 25 26 27 dB SVRR supply voltage ripple rejection note 3 on 48 −− dB mute 46 −− dB standby 80 −− dB Z i input impedance 25 30 38 k Ω Vn(o) noise output voltage on; Rs =0 Ω; note 4 − 70 −µV on; Rs =10kΩ; note 4 − 100 200 µV mute; notes 4 and 5 − 60 −µV α cs channel separation Rs =10kΩ 40 60 − dB DYNAMIC DISTORTION DETECTOR THD total harmonic distortion V16 ≤ 0.6 V; no short-circuit − 10 − % |
Nº de peça semelhante - TDA8510 |
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Descrição semelhante - TDA8510 |
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