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FM22L16-55-TG Folha de dados(PDF) 1 Page - Ramtron International Corporation |
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FM22L16-55-TG Folha de dados(HTML) 1 Page - Ramtron International Corporation |
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1 / 15 page  Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.0 http://www.ramtron.com Mar. 2007 Page 1 of 15 FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 10 14 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process SRAM Compatible • JEDEC 256Kx16 SRAM Pinout • 55 ns Access Time, 110 ns Cycle Time Advanced Features • Low VDD Monitor Protects Memory against Inadvertent Writes • Software Programmable Block Write Protect Superior to Battery-backed SRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration Low Power Operation • 2.7V – 3.6V Power Supply • Low Current Mode (5µA) using ZZ pin • 18 mA Active Current Industry Standard Configuration • Industrial Temperature -40 ° C to +85° C • 44-pin “Green”/RoHS TSOP-II package Description The FM22L16 is a 256Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and unlimited write endurance make FRAM superior to other types of memory. In-system operation of the FM22L16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The FRAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22L16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM22L16 includes a low voltage monitor that blocks access to the memory array when VDD drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition. The device also features software-controlled write protection. The memory array is divided into 8 uniform blocks, each of which can be individually write protected. The device is available in a 400 mil 44-pin TSOP-II surface mount package. Device specifications are guaranteed over industrial temperature range –40°C to +85°C. Pin Configuration 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A4 A3 A2 A1 A0 A13 A14 DQ0 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ7 WE VDD A15 A16 A17 CE A12 /ZZ OE A7 A6 A5 VSS DQ12 DQ11 DQ8 DQ9 DQ10 LB A8 A9 A10 A11 VDD UB DQ13 DQ14 DQ15 Ordering Information FM22L16-55-TG 55 ns access, 44-pin “Green”/RoHS TSOP-II |
Nº de peça semelhante - FM22L16-55-TG |
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Descrição semelhante - FM22L16-55-TG |
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