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TDA8512 Folha de dados(PDF) 10 Page - NXP Semiconductors

Nome de Peças TDA8512
Descrição Electrónicos  26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
Download  24 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA8512 Folha de dados(HTML) 10 Page - NXP Semiconductors

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2001 Nov 16
10
Philips Semiconductors
Preliminary specification
26 W BTL and 2
× 13 W SE or
4
× 13 W SE power amplifier
TDA8512J
Notes
1. Output power is measured directly at the output pins of the device.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0
Ω; maximum ripple of 2 V (p-p) and at a
frequency between 100 Hz to 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independant of Rs (Vi = 0 V).
Z
i
input impedance
25
30
38
k
Vn(o)
noise output voltage
operating; Rs =0 Ω; note 4
70
−µV
operating; Rs =10kΩ; note 4
100
200
µV
mute; notes 4 and 5
60
−µV
SE channels
Po
output power
RL1 =2 Ω (see Fig.7); note 1
THD = 0.5%
8.0
10.0
W
THD = 10%
11.0
13.0
W
RL1 =4 Ω (see Fig.7); note 1
THD = 0.5%
5.5
W
THD = 10%
7.0
W
THD
total harmonic distortion
Po =1W
0.06
%
fro(l)
low frequency roll-off
at
−1 dB; note 2
25
Hz
fro(h)
high frequency roll-off
at
−1dB
20
−−
kHz
Gv
closed loop voltage gain
19
20
21
dB
SVRR
supply voltage ripple rejection
note 3;
operating
48
−−
dB
mute
46
−−
dB
standby
80
−−
dB
Z
i
input impedance
50
60
75
k
Vn(o)
noise output voltage
operating; Rs =0 Ω; note 4
50
−µV
operating; Rs =10kΩ; note 4
70
100
µV
mute; notes 4 and 5
50
−µV
α
cs
channel separation
Rs =10kΩ
40
60
dB
∆G
V
channel unbalance
−−
1dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


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