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HL6362MG Folha de dados(PDF) 1 Page - Opnext. Inc.

Nome de Peças HL6362MG
Descrição Electrónicos  Low Operating Current Visible Laser Diode
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Fabricante Electrônico  OPNEXT [Opnext. Inc.]
Página de início  http://www.opnext.com
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HL6362MG Folha de dados(HTML) 1 Page - Opnext. Inc.

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Rev.5 Apr. 14, 2006 page 1 of 5
HL6362MG/63MG
Low Operating Current Visible Laser Diode
ODE-208-011E (Z)
Rev.5
Apr. 14, 2006
Description
The HL6362MG/63MG are 0.63
µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser display, laser scanners and optical equipment for measurement.
Features
• Visible light output
: 640 nm Typ
• Single longitudinal mode
• Optical output power : 40 mW CW
• Low operating current : 90 mA Typ
• Low operating voltage : 2.6 V Max
• Operating temperature : +50°C
• TE mode oscillation
LD
PD
1
3
Internal Circuit
• HL6362MG
Internal Circuit
• HL6363MG
Package Type
• HL6362MG/63MG: MG
LD
PD
1
3
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Symbol
Ratings
Unit
Optical output power
PO
45
mW
LD reverse voltage
VR(LD)
2
V
PD reverse voltage
VR(PD)
30
V
Operating temperature
Topr
–10 to +50
°C
Storage temperature
Tstg
–40 to +85
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Threshold current
Ith
45
60
mA
Operating current
IOP
90
110
mA
PO = 40 mW
Operating voltage
VOP
2.4
2.6
V
PO = 40 mW
Beam divergence
parallel to the junction
θ//
7
10
13
°
PO = 40 mW
Beam divergence
perpendicular to the junction
θ⊥
16
21
24
°
PO = 40 mW
Lasing wavelength
λp
640
643
nm
PO = 40 mW
Monitor current
IS
0.15
0.30
0.60
mA
PO = 40 mW ,VR(PD) = 5 V


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