2SJ687-ZK-E2-AY datasheet(1/8 Pages) NEC

Nome de Peças	2SJ687-ZK-E2-AY

Descrição Electrónicos	MOS FIELD EFFECT TRANSISTOR

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MOS FIELD EFFECT TRANSISTOR

2SJ687

SWITCHING

P-CHANNEL POWER MOSFET

DATA SHEET

Document No. D18719EJ2V0DS00 (2nd edition)

Date Published May 2007 NS

Printed in Japan

2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

FEATURES

• Low on-state resistance

RDS(on)1 = 7.0 m

Ω MAX. (VGS = −4.5 V, ID = −10 A)

RDS(on)2 = 9.0 m

Ω MAX. (VGS = −3.0 V, ID = −10 A)

RDS(on)3 = 20 m

Ω MAX. (VGS = −2.5 V, ID = −10 A)

• 2.5 V drive available

• Avalanche capability ratings

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

2SJ687-ZK-E1-AY

Note

2SJ687-ZK-E2-AY

Note

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

0.27 g TYP.

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m12

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

m20

A

Drain Current (pulse)

Note1

ID(pulse)

m60

A

Total Power Dissipation (TC = 25

°C)

PT1

36

W

Total Power Dissipation (TA = 25

°C)

PT2

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note2

IAS

−20

A

Single Avalanche Energy

Note2

EAS

40

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V

(TO-252)

Nº de peça semelhante - 2SJ687-ZK-E2-AY

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