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IRLMS1503 Folha de dados(PDF) 6 Page - International Rectifier

Nome de Peças IRLMS1503
Descrição Electrónicos  HEXFET짰 Power MOSFET
Download  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLMS1503 Folha de dados(HTML) 6 Page - International Rectifier

  IRLMS1503 Datasheet HTML 1Page - International Rectifier IRLMS1503 Datasheet HTML 2Page - International Rectifier IRLMS1503 Datasheet HTML 3Page - International Rectifier IRLMS1503 Datasheet HTML 4Page - International Rectifier IRLMS1503 Datasheet HTML 5Page - International Rectifier IRLMS1503 Datasheet HTML 6Page - International Rectifier IRLMS1503 Datasheet HTML 7Page - International Rectifier IRLMS1503 Datasheet HTML 8Page - International Rectifier  
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IRLMS1503PbF
6
www.irf.com
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

*
Fig 13. For N-channel HEXFET® power MOSFET s


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