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IRLP3803 Folha de dados(PDF) 1 Page - International Rectifier |
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IRLP3803 Folha de dados(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET IRLP3803 PD - _____ Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 30V RDS(on) = 0.006Ω ID = 120A 8/4/95 Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 1.0 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W RθJA Junction-to-Ambient –––– –––– 40 Thermal Resistance PRELIMINARY Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 120 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 83 A IDM Pulsed Drain Current 470 PD @TC = 25°C Power Dissipation 150 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 610 mJ IAR Avalanche Current 71 A EAR Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt 1.8 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings Next Data Sheet Index Previous Datasheet To Order |
Nº de peça semelhante - IRLP3803 |
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Descrição semelhante - IRLP3803 |
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