GSS4224

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ISSUED DATE :2005/04/12

REVISED DATE :2005/09/30B

G

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GSS4224 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low On-Resistance

*Simple Drive Requirement

*Dual N MOSFET Package

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

M

0.10

0.25

B

4.80

5.00

H

0.35

0.49

C

3.80

4.00

L

1.35

1.75

D

0 C

8 C

J

0.375 REF.

E

0.40

0.90

K

45 C

F

0.19

0.25

G

1.27 TYP.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

f 20

V

10

A

8

A

30

A

Total Power Dissipation

2

W

Linear Derating Factor

0.016

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-amb

62.5

/W

30V

14m

10A

Pb Free Plating Product