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GSS6900S Folha de dados(PDF) 3 Page - GTM CORPORATION |
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3 / 8 page GSS4816S Page: 3/8 ISSUED DATE :2006/04/28 REVISED DATE : CH-2 Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.1 - V/ : Reference to 25 , I : D=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 11 - S VDS=10V, ID=9A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25 ) : - - 100 uA VDS=30V, VGS=0 Drain-Source Leakage Current(Tj=70 ) : IDSS - - 1 mA VDS=24V, VGS=0 - - 22 VGS=10V, ID=9A Static Drain-Source On-Resistance2 RDS(ON) - 29 m VGS=4.5V, ID=7A Total Gate Charge2 Qg - 25 40 Gate-Source Charge Qgs - 4 - Gate-Drain (“Miller”) Change Qgd - 7 - nC ID=7A VDS=24V VGS=10V Turn-on Delay Time2 Td(on) - 10 - Rise Time Tr - 6 - Turn-off Delay Time Td(off) - 26 - Fall Time Tf - 12 - ns VDS=20V ID=1A VGS=10 RG=5.7 RD=20 Input Capacitance Ciss - 1170 1860 Output Capacitance Coss - 205 - Reverse Transfer Capacitance Crss - 142 - pF VGS=0V VDS=25V f=1.0MHz Gate Resistance Rg - 1.7 - f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=2.6A, VGS=0V Reverse Recovery Time2 Trr - 21 - ns Reverse Recovery Charge Qrr - 16 - nC IS=7A, VGS=0V dI/dt=100A/ s Schottky Characteristics @ Tj=25 (unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage Drop VF - 0.47 0.5 V IF=1A - 0.004 0.2 mA VR=30V Max. Reverse Leakage Current IRM - 0.5 1 mA VR=30V, Tj=100 : Junction Capacitance CT - 66 - pF VR=10V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec. |
Nº de peça semelhante - GSS6900S |
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Descrição semelhante - GSS6900S |
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