GSS9960 datasheet(2/5 Pages) GTM

Nome de Peças	GSS9960

Descrição Electrónicos	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Fabricante Electrônico	GTM [GTM CORPORATION]

Página de início	http://www.gtm.com.tw

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GSS9960

Page: 2/5

ISSUED DATE :2005/03/02

REVISED DATE :2005/09/29B

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

40

-

V

VGS=0, ID=250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

Tj

-

0.032

-

V/ :

Reference to 25 : , ID=1mA

Gate Threshold Voltage

VGS(th)

1.0

-

3.0

V

VDS=VGS, ID=250uA

Forward Transconductance

gfs

-

25

-

S

VDS=10V, ID=7A

Gate-Source Leakage Current

IGSS

-

D100

nA

VGS= D20V

Drain-Source Leakage Current(Tj=25 : )

-

1

uA

VDS=40V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-

25

uA

VDS=32V, VGS=0

-

20

VGS=10V, ID=7A

Static Drain-Source On-Resistance

RDS(ON)

-

32

m Ł

VGS=4.5V, ID=5A

Total Gate Charge2

Qg

-

14.7

-

Gate-Source Charge

Qgs

-

7.1

-

Gate-Drain (“Miller”) Change

Qgd

-

6.8

-

nC

ID=7A

VDS=20V

VGS=4.5V

Turn-on Delay Time2

Td(on)

-

11.5

-

Rise Time

Tr

-

6.3

-

Turn-off Delay Time

Td(off)

-

28.2

-

Fall Time

Tf

-

12.6

-

ns

VDS=20V

ID=1A

VGS=10V

RG=3.3 Ł

RD=20 Ł

Input Capacitance

Ciss

-

1725

-

Output Capacitance

Coss

-

235

-

Reverse Transfer Capacitance

Crss

-

145

-

pF

VGS=0V

VDS=25V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-

1.3

V

IS=2.3A, VGS=0V, Tj=25 :

Continuous Source Current (Body Diode)

IS

-

2.3

A

VD= VG=0V, VS=1.3V

Pulsed Source Current (Body Diode)

1

ISM

-

20

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t 10sec.

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