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TEA1104T Folha de dados(PDF) 9 Page - NXP Semiconductors |
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TEA1104T Folha de dados(HTML) 9 Page - NXP Semiconductors |
9 / 16 page 1996 Feb 26 9 Philips Semiconductors Objective specification Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers TEA1104; TEA1104T CHARACTERISTICS VP = 10 V; Tamb =25 °C; Rref =33kΩ;COSC = 1 nF; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage 5.45 − 11.5 V ∆VP/∆t supply voltage start rate −− 0.5 V/ µs Vclamp clamping voltage Iclamp =25mA 11.5 − 12.8 V Vstart start-up voltage 6.1 6.4 6.7 V Vpd power-down voltage level 4.65 5.05 5.45 V IP supply current outputs off −− 3mA Istart start-up current VP =4V − 45 50 µA VS stabilized voltage IS = 1 mA 4.03 4.25 4.46 V VRref voltage range at reference resistor IRref =20 µA 1.18 1.25 1.31 V TCVref temperature coefficient of the reference voltage Tamb = 0 to 45 °C −±60 ±120 ppm/K IRref current range of the reference resistor 10 − 100 µA Temperature related input; NTC Vi(co) input voltage level for detecting temperature cut-off 0.75 0.81 0.87 V Vi(co; max) maximum input voltage level for detecting temperature cut-off 0.92 1.0 1.08 V Vi(co; min) minimum input voltage level for detecting temperature cut-off 1.85 2.0 2.15 V INTC input current VNTC = 1.5 V −5 − +5 µA Output drivers δLED LED pulse duty factor 2.4 2.5 2.6 % VLED(sat) LED saturation voltage ILED(sat) =15mA −− 600 mV ILI(LED) LED input leakage current VLED =15V −− 5 µA Battery monitor Ii(bat) input battery current Vbat = 2.4 V − 1 − nA Vbat voltage range for peak detection 0.81 − 3.6 V ∆V bat/Vbat peak detection level with respect to top level Vbat =2V − 0.25 − % Tj temperature range of peak detection 0 − 50 °C Protections; BAT Vbat(l) low level battery protection voltage − 0.81 0.91 V Vbat(h) high level battery protection voltage 3.5 3.6 4.5 V Oscillator k correction factor 0.84 0.93 1.02 fosc frequency range 10 − 100 kHz |
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