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STD60NF55LAT4 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STD60NF55LAT4
Descrição Electrónicos  N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD60NF55LAT4 Folha de dados(HTML) 3 Page - STMicroelectronics

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STD60NF55LA
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
55
V
VGS
Gate- source voltage
± 15
V
ID
Drain current (continuous) at TC = 25°C
60
A
ID
Drain current (continuous) at TC = 100°C
42
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
240
A
Ptot
Total dissipation at TC = 25°C
110
W
Derating Factor
0.73
W/°C
dv/dt(2)
2.
ISD ≤40A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
16
V/ns
EAS
(3)
3.
Starting Tj = 25
oC, I
D = 17.5A, VDD =24V
Single pulse avalanche energy
400
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
1.36
°C/W
Rthj-amb
Thermal resistance junction-to ambient max
100
°C/W


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