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2SC6081 Datasheet(Folha de dados) 2 Page - Sanyo Semicon Device

Nome de Peças. 2SC6081
descrição  NPN Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching
Download  4 Pages
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Fbricantes  SANYO [Sanyo Semicon Device]
Página de início  http://www.ssdc-jp.com/eng/
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2SC6081
No. A0278-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=0.7A
250
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
35
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=2.5A, IB=125mA
200
400
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2.5A, IB=125mA
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100µA, IE=0A
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=100µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
49
ns
Storage Time
tstg
See specified Test Circuit.
600
ns
Fall Time
tf
See specified Test Circuit.
42
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7508-002
VR
RB
VCC=25V
IC=20IB1= --20IB2=1.5A
VBE= --5V
+
+
50
RL
INPUT
OUTPUT
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
10.0
3.2
4.5
2.8
1.6
1.2
0.7
0.75
2.55
2.55
12
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT10562
2.0
1.6
1.2
0.4
0.8
1.8
1.4
0.6
1.0
0.2
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT10563
2mA
3mA
IB=0mA
1mA
5mA
10mA
4mA
9mA
8mA
5.0
4.0
3.0
1.0
2.0
4.5
3.5
1.5
2.5
0.5
0
0.4
0
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
5mA
10mA
IB=0mA
2mA
15mA
20mA
25mA
30mA
60mA
45mA
40mA
50mA
35mA




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