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BU426 Folha de dados(PDF) 2 Page - Power Innovations Ltd |
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BU426 Folha de dados(HTML) 2 Page - Power Innovations Ltd |
2 / 7 page BU426, BU426A NPN SILICON POWER TRANSISTORS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC = 100 mA L = 25 mH (see Note 2) BU426 BU426A 375 400 V ICES Collector-emitter cut-off current VCE = 800 V VCE = 900 V VCE = 800 V VCE = 900 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 TC = 125°C TC = 125°C BU426 BU426A BU426 BU426A 1 1 2 2 mA IEBO Emitter cut-off current VEB = 10 V IC = 0 10 mA hFE Forward current transfer ratio VCE = 5 V IC = 0.6 A (see Notes 3 and 4) 30 60 VCE(sat) Collector-emitter saturation voltage IB = 0.5 A IB = 1.25 A IC = 2.5 A IC = 4 A (see Notes 3 and 4) 1.5 3 V VBE(sat) Base-emitter saturation voltage IB = 0.5 A IB = 1.25 A IC = 2.5 A IC = 4 A (see Notes 3 and 4) 1.4 1.6 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.1 °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn on time IC = 2.5 A VCC = 250 V IB(on) = 0.5 A (see Figures 1 and 2) IB(off) = -1 A 0.3 0.6 µs ts Storage time 2 3.5 µs tf Fall time 0.15 µs tf Fall time IC = 2.5 A VCC = 250 V IB(on) = 0.5 A TC = 95°C IB(off) = -1 A 0.2 0.75 µs |
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