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SI3552DV Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI3552DV Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 8 page Si3552DV Vishay Siliconix www.vishay.com 2 Document Number: 70971 S-31725—Rev. B, 18-Aug-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 1.0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA P-Ch -1.0 V Gate Body Leakage IGSS VDS = 0 V VGS = "20 V N-Ch "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V P-Ch "100 nA VDS = 24 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V P-Ch -1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 mA VDS = -24 V, VGS = 0 V, TJ = 55_C P-Ch -5 On State Drain Currenta ID( ) VDS = 5 V, VGS = 10 V N-Ch 5 A On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V P-Ch -5 A VGS = 10 V, ID = 2.5 A N-Ch 0.085 0.105 Drain Source On State Resistancea rDS( ) VGS = -10 V, ID = -1.8 A P-Ch 0.165 0.200 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 2.0 A N-Ch 0.140 0.175 W VGS = -4.5 V, ID = -1.2 A P-Ch 0.298 0.360 Forward Transconductancea gf VDS = 10 V, ID = 2.5 A N-Ch 4.3 S Forward Transconductancea gfs VDS = -15 V, ID = -1.8 A P-Ch 2.4 S Diode Forward Voltagea VSD IS = 1.05 A, VGS = 0 V N-Ch 0.81 1.10 V Diode Forward Voltagea VSD IS = -1.05 A, VGS = 0 V P-Ch -0.83 -1.10 V Dynamicb Total Gate Charge Qg N-Ch 2.1 3.2 Total Gate Charge Qg N-Channel P-Ch 2.4 3.6 Gate Source Charge Q N-Channel VDS = 15 V, VGS = 5 V, ID = 1.8 A N-Ch 0.7 nC Gate-Source Charge Qgs P-Channel V 15 V V 5 V I 18 A P-Ch 0.9 nC Gate Drain Charge Q d VDS = -15 V, VGS = -5 V, ID = -1.8 A N-Ch 0.7 Gate-Drain Charge Qgd P-Ch 0.8 Gate Resistance R N-Ch 0.5 2.4 W Gate Resistance Rg P-Ch 3 11 W Turn On Delay Time td( ) N-Ch 7 11 Turn-On Delay Time td(on) P-Ch 8 12 Rise Time t N-Channel VDD = 15 V, RL = 15 W N-Ch 9 14 Rise Time tr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Ch 12 18 Turn Off Delay Time td( ff) P-Channel V 1 V R 1 W N-Ch 13 20 ns Turn-Off Delay Time td(off) P Channel VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W P-Ch 12 18 ns Fall Time tf ID ^ -1 A, VGEN = -10 V, RG = 6 W N-Ch 5 8 Fall Time tf P-Ch 7 11 Source-Drain t IF = 1.05 A, di/dt = 100 A/ms N-Ch 35 60 Source-Drain Reverse Recovery Time trr IF = -1.05 A, di/dt = 100 A/ms P-Ch 30 60 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
Nº de peça semelhante - SI3552DV_05 |
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Descrição semelhante - SI3552DV_05 |
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