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BUZ110SE3045A Folha de dados(PDF) 1 Page - Infineon Technologies AG

Nome de Peças BUZ110SE3045A
Descrição Electrónicos  SIPMOS짰 Power Transistor
Download  8 Pages
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ110SE3045A Folha de dados(HTML) 1 Page - Infineon Technologies AG

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BUZ 110S
Data Book
1
05.99
SIPMOS
 Power Transistor
Product Summary
Drain source voltage
55
VDS
V
Drain-Source on-state resistance
Ω
0.01
RDS(on)
ID
Continuous drain current
80
A
Features
• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175 ˚C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
BUZ110S
Tube
P-TO220-3-1 Q67040-S4005-A2
BUZ110S E3045A
Tape and Reel
Q67040-S4005-A6
P-TO263-3-2
Tube
BUZ110S E3045
P-TO263-3-2 Q67040-S4005-A5
Maximum Ratings,at
Tj = 25 ˚C unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
TC = 25 ˚C, limited by bond wire
TC = 100˚C
80
66
ID
A
Pulsed drain current
TC = 25 ˚C
IDpulse
320
Avalanche energy, single pulse
ID =80 A, VDD =25V, RGS =25 Ω
mJ
EAS
460
Avalanche energy, periodic limited by
Tjmax
20
EAR
Reverse diode d
v/dt
IS =80 A, VDS =40V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
d
v/dt
6
kV/
µs
Gate source voltage
VGS
±20
V
Power dissipation
TC = 25 ˚C
Ptot
200
W
Operating and storage temperature
Tj , Tstg
˚C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1


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