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TICP206 Folha de dados(PDF) 1 Page - Power Innovations Ltd |
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TICP206 Folha de dados(HTML) 1 Page - Power Innovations Ltd |
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1 / 7 page  TICP206 SERIES SILICON TRIACS PRODUCT INFORMATION 1 MARCH 1988 - REVISED MARCH 1997 Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1997, Power Innovations Limited, UK q 1.5 A RMS q Glass Passivated Wafer q 400 V to 600 V Off-State Voltage q Max IGT of 10 mA q Package Options PACKAGE PACKING PART # SUFFIX LP Bulk (None) LP with fomed leads Tape and Reel R LP PACKAGE (TOP VIEW) MDC2AA G MT2 MT1 1 2 3 LP PACKAGE WITH FORMED LEADS (TOP VIEW) G MDC2AB MT2 MT1 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 60 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TICP206D TICP206M VDRM 400 600 V Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 1.5 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 10 A Peak on-state surge current half-sine-wave (see Note 4) ITSM 12 A Peak gate current IGM ±0.2 A Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C Lead temperature 1.6 mm from case for 10 seconds TL 230 °C electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off- state current VD = rated VDRM IG = 0 ±20 µA IGTM Peak gate trigger current Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 8 -8 -8 10 mA VGTM Peak gate trigger voltage Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 2.5 -2.5 -2.5 2.5 V † All voltages are with respect to Main Terminal 1. |
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