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TIP106 Folha de dados(PDF) 2 Page - Power Innovations Ltd

Nome de Peças TIP106
Descrição Electrónicos  PNP SILICON POWER DARLINGTONS
Download  6 Pages
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Fabricante Electrônico  POINN [Power Innovations Ltd]
Página de início  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIP106 Folha de dados(HTML) 2 Page - Power Innovations Ltd

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TIP105, TIP106, TIP107
PNP SILICON POWER DARLINGTONS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -30 mA
(see Note 5)
IB = 0
TIP105
TIP106
TIP107
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -40 V
VCE = -50 V
IB = 0
IB = 0
IB = 0
TIP105
TIP106
TIP107
-50
-50
-50
µA
ICBO
Collector cut-off
current
VCB = -60 V
VCB = -80 V
VCB = -100 V
IE = 0
IE = 0
IE = 0
TIP105
TIP106
TIP107
-50
-50
-50
µA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC = 0
-8
mA
hFE
Forward current
transfer ratio
VCE =
-4 V
VCE =
-4 V
IC = -3 A
IC = -8 A
(see Notes 5 and 6)
1000
200
20000
VCE(sat)
Collector-emitter
saturation voltage
IB =
-6 mA
IB =
-80 mA
IC = -3 A
IC = -8 A
(see Notes 5 and 6)
-2
-2.5
V
VBE
Base-emitter
voltage
VCE =
-4 V
IC = -8 A
(see Notes 5 and 6)
-2.8
V
VEC
Parallel diode
forward voltage
IE =
-8 A
IB = 0
(see Notes 5 and 6)
-3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
CθC
Thermal capacitance of case
0.9
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
td
Delay time
IC = -8 A
VBE(off) = 5 V
IB(on) = -80 mA
RL = 5 Ω
IB(off) = 80 mA
tp = 20 µs, dc ≤ 2%
35
ns
tr
Rise time
300
ns
ts
Storage time
900
ns
tf
Fall time
1.3
µs


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