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TIP146 Folha de dados(PDF) 2 Page - Power Innovations Ltd |
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TIP146 Folha de dados(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page TIP145, TIP146, TIP147 PNP SILICON POWER DARLINGTONS 2 DECEMBER 1971 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA (see Note 5) IB = 0 TIP145 TIP146 TIP147 -60 -80 -100 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V IB = 0 IB = 0 IB = 0 TIP145 TIP146 TIP147 -2 -2 -2 mA ICBO Collector cut-off current VCB = -60 V VCB = -80 V VCB = -100 V IE = 0 IE = 0 IE = 0 TIP145 TIP146 TIP147 -1 -1 -1 mA IEBO Emitter cut-off current VEB = -5 V IC = 0 -2 mA hFE Forward current transfer ratio VCE = -4 V VCE = -4 V IC = -5 A IC = -10 A (see Notes 5 and 6) 1000 500 VCE(sat) Collector-emitter saturation voltage IB = -10 mA IB = -40 mA IC = -5 A IC = -10 A (see Notes 5 and 6) -2 -3 V VBE Base-emitter voltage VCE = -4 V IC = -10 A (see Notes 5 and 6) -3 V VEC Parallel diode forward voltage IE = -10 A IB = 0 (see Notes 5 and 6) -3.5 V resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = -10 A VBE(off) = 4.2 V IB(on) = -40 mA RL = 3 Ω IB(off) = 40 mA tp = 20 µs, dc ≤ 2% 0.9 µs toff Turn-off time 11 µs |
Nº de peça semelhante - TIP146 |
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Descrição semelhante - TIP146 |
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