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TIPL790A Folha de dados(PDF) 2 Page - Power Innovations Ltd

Nome de Peças TIPL790A
Descrição Electrónicos  NPN SILICON POWER DARLINGTONS
Download  7 Pages
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Fabricante Electrônico  POINN [Power Innovations Ltd]
Página de início  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIPL790A Folha de dados(HTML) 2 Page - Power Innovations Ltd

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TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
5. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC = 100 mA
L = 25 mH
(see Note 2)
TIPL790
TIPL790A
120
150
V
VCBO
Collector-base
breakdown voltage
IC =
1 mA
(see Note 3)
TIPL790
TIPL790A
150
200
V
ICES
Collector-emitter
cut-off current
VCE = 150 V
VCE = 200 V
VCE = 150 V
VCE = 200 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TC = 100°C
TC = 100°C
TIPL790
TIPL790A
TIPL790
TIPL790A
0.05
0.05
1
1
mA
ICEV
Collector cut-off
current
VCE = 150 V
VCE = 200 V
1.5 < VEB <8 V
TIPL790
TIPL790A
50
50
µA
ICEO
Collector cut-off
current
VCE = 120 V
VCE = 150 V
IB = 0
IB = 0
TIPL790
TIPL790A
50
50
µA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
4
mA
hFE
Forward current
transfer ratio
VCE =
5 V
IC = 0.5 A
(see Notes 3 and 4)
60
500
VCE(sat)
Collector-emitter
saturation voltage
IB =
20 mA
IB =
30 mA
IB =
50 mA
IB =
50 mA
IC = 4 A
IC = 7 A
IC = 10 A
IC = 10 A
(see Notes 3 and 4)
TC = 100°C
1.2
1.5
2.0
2.0
V
VBE(sat)
Base-emitter
saturation voltage
IB =
20 mA
IB =
30 mA
IB =
50 mA
IB =
50 mA
IC = 4 A
IC = 7 A
IC = 10 A
IC = 10 A
(see Notes 3 and 4)
TC = 100°C
1.8
1.9
2.2
2.1
V
VEC
Parallel diode
forward voltage
IE =
10 A
IB = 0
3
V
ft
Current gain
bandwidth product
VCE =
10 V
IC = 0.5 A
f =
1 MHz
(see Note 5)
10
MHz
Cob
Output capacitance
VCB =
20 V
IE = 0
f = 0.1 MHz
90
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.79
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tsi
Current storage time
IC = 10 A
IB(off) = -2.5 A
IB(on) = 50 mA
VBE(off) = -5 V
(see Figures 1 and 2)
450
700
ns
trv
Voltage rise time
160
750
ns
tfi
Current fall time
250
400
ns
tti
Current tail time
280
450
ns
txo
Cross over time
320
500
ns


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