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TIPL790A Folha de dados(PDF) 2 Page - Power Innovations Ltd |
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TIPL790A Folha de dados(HTML) 2 Page - Power Innovations Ltd |
2 / 7 page TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 5. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC = 100 mA L = 25 mH (see Note 2) TIPL790 TIPL790A 120 150 V VCBO Collector-base breakdown voltage IC = 1 mA (see Note 3) TIPL790 TIPL790A 150 200 V ICES Collector-emitter cut-off current VCE = 150 V VCE = 200 V VCE = 150 V VCE = 200 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 TC = 100°C TC = 100°C TIPL790 TIPL790A TIPL790 TIPL790A 0.05 0.05 1 1 mA ICEV Collector cut-off current VCE = 150 V VCE = 200 V 1.5 < VEB <8 V TIPL790 TIPL790A 50 50 µA ICEO Collector cut-off current VCE = 120 V VCE = 150 V IB = 0 IB = 0 TIPL790 TIPL790A 50 50 µA IEBO Emitter cut-off current VEB = 5 V IC = 0 4 mA hFE Forward current transfer ratio VCE = 5 V IC = 0.5 A (see Notes 3 and 4) 60 500 VCE(sat) Collector-emitter saturation voltage IB = 20 mA IB = 30 mA IB = 50 mA IB = 50 mA IC = 4 A IC = 7 A IC = 10 A IC = 10 A (see Notes 3 and 4) TC = 100°C 1.2 1.5 2.0 2.0 V VBE(sat) Base-emitter saturation voltage IB = 20 mA IB = 30 mA IB = 50 mA IB = 50 mA IC = 4 A IC = 7 A IC = 10 A IC = 10 A (see Notes 3 and 4) TC = 100°C 1.8 1.9 2.2 2.1 V VEC Parallel diode forward voltage IE = 10 A IB = 0 3 V ft Current gain bandwidth product VCE = 10 V IC = 0.5 A f = 1 MHz (see Note 5) 10 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 90 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.79 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT tsi Current storage time IC = 10 A IB(off) = -2.5 A IB(on) = 50 mA VBE(off) = -5 V (see Figures 1 and 2) 450 700 ns trv Voltage rise time 160 750 ns tfi Current fall time 250 400 ns tti Current tail time 280 450 ns txo Cross over time 320 500 ns |
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Descrição semelhante - TIPL790A |
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